Systems and methods for color binning

ABSTRACT

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

This application is a divisional and claims the benefit of priority toU.S. patent application Ser. No. 14/010,095, filed Aug. 26, 2013, whichis a continuation of U.S. patent application Ser. No. 12/914,480, filedon Oct. 28, 2010, which claims the benefit of priority under 35 U.S.C.119(e) to U.S. Provisional Patent Application Ser. No. 61/256,914, filedon Oct. 30, 2009, which are all incorporated herein by reference intheir entireties.

TECHNICAL FIELD

The present invention generally relates to optical and electronicdevices, systems and methods that include optically sensitive material,such as nanocrystals or other optically sensitive material, and methodsof making and using the devices and systems.

INCORPORATION BY REFERENCE

Each patent, patent application, and/or publication mentioned in thisspecification is herein incorporated by reference in its entirety to thesame extent as if each individual patent, patent application, and/orpublication was specifically and individually indicated to beincorporated by reference.

BRIEF DESCRIPTION OF FIGURES

The systems and methods described herein may be understood by referenceto the following figures:

FIG. 1 shows overall structure and areas according to an embodiment.

FIG. 2 shows an example of a quantum dot 1200.

FIG. 3a shows an aspect of a closed simple geometrical arrangement ofpixels;

FIG. 3b shows an aspect of a open simple geometrical arrangement ofpixels;

FIG. 4 shows a two-row by three-column sub-region within a generallylarger array of top-surface electrodes;

FIG. 5a shows a Bayer filter pattern;

FIG. 5b-f show examples of some alternative pixel layouts;

FIG. 5g -1 show pixels of different sizes, layouts and types used inpixel layouts;

FIG. 5m shows pixel layouts with different shapes, such as hexagons;

FIG. 5n shows pixel layouts with different shapes, such as triangles;

FIG. 5o shows a quantum dot pixel, such as a multi-spectral quantum dotpixel or other pixel, provided in association with an optical element;

FIG. 5p shows an example of a pixel layout;

FIG. 6a illustrates a 3T transistor configuration for interfacing withthe quantum dot material;

FIG. 6b illustrates a 4T transistor configuration for interfacing withthe quantum dot material;

FIG. 7 is a block diagram of an example system configuration that may beused in combination with embodiments described herein.

FIGS. 8 A-C illustrate color pixel patterns, binning sites and binnedpatterns that may be used in example embodiments.

FIG. 9 A-D illustrate pixel circuitry for binning that may be used inexample embodiments.

FIG. 10 illustrates interleaved electrode grids that may be used forbinning in an example embodiment.

FIG. 11 illustrates an electrode layout and pixel circuit according toan example embodiment.

FIG. 12A illustrates an electrode layout for 4-to-1 binning according toan example embodiment.

FIG. 12B illustrates an electrode layout for 3-to-1 binning according toan example embodiment.

Embodiments are described, by way of example only, with reference to theaccompanying drawings. The drawings are not necessarily to scale. Forclarity and conciseness, certain features of the embodiment may beexaggerated and shown in schematic form.

DESCRIPTION

Example embodiments provide image sensors that use an array of pixelelements to detect an image. The pixel elements may includephotosensitive material. The image sensor may detect a signal from thephotosensitive material in each of the pixel regions that varies basedon the intensity of light incident on the photosensitive material. Inone example embodiment, the photosensitive material is a continuous filmof interconnected nanoparticles. Electrodes are used to apply a biasacross each pixel area. Pixel circuitry is used to integrate a signal ina charge store over a period of time for each pixel region. The circuitstores an electrical signal proportional to the intensity of lightincident on the optically sensitive layer during the integration period.The electrical signal can then be read from the pixel circuitry andprocessed to construct a digital image corresponding to the lightincident on the array of pixel elements. In example embodiments, thepixel circuitry may be formed on an integrated circuit device below thephotosensitive material. For example, a nanocrystal photosensitivematerial may be layered over a CMOS integrated circuit device to form animage sensor. Metal contact layers from the CMOS integrated circuit maybe electrically connected to the electrodes that provide a bias acrossthe pixel regions. U.S. patent application Ser. No. 12/10,625, titled“Materials, Systems and Methods for Optoelectronic Devices”, filed Apr.18, 2008 (Publication No. 20090152664) includes additional descriptionsof optoelectronic devices, systems and materials that may be used inconnection with example embodiments and is hereby incorporated herein byreference in its entirety. This is an example embodiment only and otherembodiments may use different photodetectors and photosensitivematerials. For example, embodiments may use silicon or Gallium Arsenide(GaAs) photodetectors.

In example embodiments, an image sensor may be provided with a largenumber of pixel elements to provide high resolution. For example, anarray of 4, 6, 8, 12 or more megapixels may be provided. To provide acolor image sensor, each pixel may have color subpixel elements. Forexample, red, blue and green subpixels may be provided for each pixel.The signal from each color subpixel may be read out separately inexample embodiments. In an example embodiment, electrodes provide a biasacross each color subpixel and a signal is integrated over a period oftime and then read out of the pixel circuit. The different colorsubpixels may be provided by positioning a color filter over thephotosensitive material. The color filter permits the desired color oflight to pass through to the photosensitive material for each colorsubpixel and blocks the other colors. In an alternative embodiment,different photosensitive materials may be used in each color subpixelregion, where the photosensitive material is sensitive to the desiredcolor of light for the respective subpixel region. In other embodiments,vertically stacked layers of photosensitive material may be used, withdifferent layers being sensitive to different colors to provide thecolor subpixel elements for each pixel.

In example embodiments, the array of pixels and color subpixel elementsmay be relatively small. For example, an entire array of 2 megapixelsmay be less than about 3,000 microns by about 2,000 microns, an array of4 megapixels may be less than about 4,250 microns by about 2,850microns, and an array of 8 megapixels may be less than about 6,000microns by about 4,000 microns. Each color subpixel region may be 2microns square or less in some embodiments, or 1.5 microns square orless in some embodiments. In some example embodiments, each subpixel isabout 1.4 microns square. In another example embodiment, each subpixelis about 1.1 micron square. Small sized, dense arrays of pixels may beused for applications such as cameras on cell phones where highresolution is desired, but a small image sensor is required.

In example embodiments, multiple modes of operation may be provided. Insome modes, high resolution may be provided where a signal is read fromeach smallest subpixel element in the array. In other modes, subpixelelements may be binned together to provide a lower resolution image. Inexample embodiments, the subpixels for each color element may be binnedfor 2, 3, 4 or more pixels to provide separate color elements for alarger superpixel. The subpixels that are binned together may be colorsubpixels from two or more adjacent subpixels. For example, the green,blue or red subpixels for two adjacent pixels may be combined to formgreen, blue and red color elements for a superpixel that is twice aslarge as the original pixel. Various patterns of pixels may be binnedtogether. For example, color subpixels for a block of four pixels may bebinned (2 adjacent pixels from one row together with two adjacent pixelsfrom an adjacent row may have each of their green, blue and red colorsubpixel elements combined into larger green, blue and red colorelements). In another example, an “L” shaped group of subpixels may bebinned together (two subpixels in one row together with a subpixel froman adjacent row that is in the same column as one of those twosubpixels). In other embodiments, subpixels of the same color fromadjacent pixels may align diagonally and be binned together to provide acolor element for a superpixel. In some embodiments, subpixels for oneof the color elements are binned together before being read out of thepixel circuit and subpixels for other circuit elements are read outseparately. For example, in some embodiments, green subpixels frommultiple pixels are binned together and red and blue subpixels are readout separately.

In some embodiments, binning may be used to provide higher sensitivity.For example, binning may be used to detect images under lower lightconditions or may be used for video where a lower resolution may bedesired to reduce storage requirements. For example, a signal from alarger area of optically sensitive material may be read into a chargestore. The signal increases linearly with area which boosts the signalto noise ratio (SNR). For example, in a small, high resolution imagesensor array, adjacent regions of the film may be binned by changing theelectrodes that provide a bias across the film. For example, someelectrodes may be disabled so a bias is applied across a larger regionof the film.

In example embodiments for film binning, subpixels for the same colorsare binned together from multiple pixels so that color can still bedistinguished. If all of the color elements of a pixel are binnedtogether, the color resolution is lost. In typical pixel layouts, thecolor subpixels alternate between different colors. If film binning isused to bin adjacent regions having different colors, the colors can nolonger be distinguished. In example embodiments, the color subpixels arearranged in patterns where subpixels for the same color are positionedadjacent to one another. Various patterns may be used as shown in FIGS.8 A, B and C and as further described below. In a high resolution mode,a separate signal is read into a separate charge store for each of theadjacent subpixels. For binning mode, electrodes may be arranged inpatterns where a bias may be applied across multiple adjacent subpixelsfor the same color and integrated into a common charge store. In exampleembodiments, film binning may be used to read out a combined signal formultiple subpixel regions into a single charge store. The charge storemay be one of the charge stores used for an individual subpixel in thehigh resolution mode. The charge store for the other adjacent subpixelsmay be switched off in binning mode. As a result, film binning can beachieved while retaining the ability to detect a color image. In analternative embodiment, more than one (or all) of the charge stores usedin high resolution mode may be used in film binning mode to providehigher dynamic range (see discussion of dynamic range with respect tocircuit binning below).

In another approach, analog circuitry may be used to combine the signalsread out from multiple pixel or subpixel regions. This is referred to ascircuit binning. In example embodiments, a signal may be integrated foreach smallest subpixel, but the signal may be combined in the analogpixel circuitry and read out as a single signal for the entire pixel.The subpixel regions that are binned may correspond to subpixel elementsfor the same color from two or more pixels. However, the subpixelelements do not need to be adjacent and can be separated by subpixelelements for other colors. The circuitry used for binning can be routedunder the optically sensitive material to connect subpixels for binningeven if they are not from adjacent or contiguous regions of theoptically sensitive material. Since the optically sensitive material isover the integrated circuit device where the pixel circuitry is located,the pixel circuitry can be routed under adjacent subpixels (of differentcolors) to reach a non-adjacent subpixel (having the same color) inorder to bin the same colors together from different pixels even thoughthe subpixels are not next to each other.

In some circuit binning embodiments, each subpixel element may be readout using the same charge store used to read out the subpixel in fullresolution mode. In this way, the charge stores used to read out thesubcomponent signals for the binned signal may have a higher capacitancethat a film binning mode where only one of the charge stores is used toread the signal from multiple subpixel regions of the opticallysensitive material. In this example, the charge stores for circuitbinning have a larger total capacitance than the charge store used forfilm binning across the same number of subpixel regions. While this doesnot provide the same sensitivity as the film binning approach, thehigher capacitance results in higher dynamic range.

In another approach, a signal may be read out for each subpixel andcombined digitally after it is read out. This is referred to as digitalbinning. However, while digital binning can boost up the signal, it atthe same time accumulates quantization error and signal chain noisesfrom each pixel. As a result the noise floor after digital binning goesup significantly, and thus limits the SNR improvement. With filmbinning, the noise floor doesn't go up, while signal increases linearlywith binning pixel area. Therefore film binning can offer significantSNR improvement.

In some embodiments, the image sensor or camera may have multiple modesof operation that use different binning techniques or combining multiplebinning techniques. In some embodiments, both film binning and circuitbinning may be used. For example, it may be desired to bin signals froma large number of pixels. Film binning may be used to combine colorsubpixels that are adjacent (for example, from 2, 3 or 4 adjacentpixels). Circuit binning can then combine these signals with binnedsignals for other pixels where the subpixels for the same color are notadjacent. In this way, 4, 6, 8, 9, 12, 16 or more pixels may be binnedwhile preserving different signals for each color. In anotherembodiment, film binning may be used to combine subpixels for somecolors (for example, for the green color elements of adjacent pixels)while circuit binning or digital binning is used to combine subpixelsfor the other color elements (for example, red and blue) to provideseparate color elements for a superpixel that combines the signals fortwo or more smallest patterned pixels. In another example embodiment,three or more modes may be provided using multiple binning techniques,including for example a high resolution mode where each smallestsubpixel is read out individually to a separate charge store, a filmbinning modes where multiple subpixels are combined in a common chargestore to provide higher sensitivity, and a circuit binning mode withhigher capacitance for the charge store(s) used to read the binnedsubpixels than the film binning mode to provide higher dynamic range, Avideo mode may also be provided where multiple frames of images are readin sequence using one of the binning modes of operation with lowerresolution per frame than the full resolution mode, but which may havehigher sensitivity or dynamic range based on the type of binning that isused in video mode.

In other embodiments, subpixel elements configured to sense radiationoutside of the visible range may also be binned together. For example,ultraviolet (UV) or infrared (IR) subpixel elements may be binnedtogether. Subpixels for different wavebands within UV or IR may also bebinned together similar to binning of separate color elements. In someembodiments, UV and/or IR wavebands may be provided in addition tosubpixel elements for wavebands of visible radiation (such as colorwavebands for R, G, B and/or Y, U, V color elements). Subpixels may beconfigured to detect different wavebands of radiation based on colorfilters used to filter different radiation for different subpixelregions and/or by using different layers or regions of opticallysensitive material that are configured to sense the respective range ofradiation.

General architecture and features of example embodiments of imagesensors will now be described, followed by a more detailed descriptionof the color filters and circuitry that may be used for color binning inexample embodiments. These embodiments are examples only and other imagesensor architectures may be used in other embodiments to provide colorbinning.

General Architecture and Features of a Quantum Dot Pixel Chip ImageSensor.

Image sensors incorporate arrays of photodetectors. These photodetectorssense light, converting it from an optical to an electronic signal. FIG.1 shows structure of and areas relating to quantum dot pixel chipstructures (QDPCs) 100, according to example embodiments. As illustratedin FIG. 1, the QDPC 100 may be adapted as a radiation 1000 receiverwhere quantum dot structures 1100 are presented to receive the radiation1000, such as light. The QDPC 100 includes, as will be described in moredetail herein, quantum dot pixels 1800 and a chip 2000 where the chip isadapted to process electrical signals received from the quantum dotpixel 1800. The quantum dot pixel 1800 includes the quantum dotstructures 1100 include several components and sub components such asquantum dots 1200, quantum dot materials 200 and particularconfigurations or quantum dot layouts 300 related to the dots 1200 andmaterials 200. The quantum dot structures 1100 may be used to createphotodetector structures 1400 where the quantum dot structures areassociated with electrical interconnections 1404. The electricalconnections 1404 are provided to receive electric signals from thequantum dot structures and communicate the electric signals on to pixelcircuitry 1700 associated with pixel structures 1500. Just as thequantum dot structures 1100 may be laid out in various patterns, bothplanar and vertical, the photodetector structures 1400 may haveparticular photodetector geometric layouts 1402. The photodetectorstructures 1400 may be associated with pixel structures 1500 where theelectrical interconnections 1404 of the photodetector structures areelectrically associated with pixel circuitry 1700. The pixel structures1500 may also be laid out in pixel layouts 1600 including vertical andplanar layouts on a chip 2000 and the pixel circuitry 1700 may beassociated with other components 1900, including memory for example. Thepixel circuitry 1700 may include passive and active components forprocessing of signals at the pixel 1800 level. The pixel 1800 isassociated both mechanically and electrically with the chip 2000. Inexample embodiments, the pixel structures 1500 and pixel circuitry 1700include structures and circuitry for film binning and/or circuit binningof separate color elements for multiple pixels as described above andbelow in connection with FIGS. 8-12. From an electrical viewpoint, thepixel circuitry 1700 may be in communication with other electronics(e.g. chip processor 2008). The other electronics may be adapted toprocess digital signals, analog signals, mixed signals and the like andit may be adapted to process and manipulate the signals received fromthe pixel circuitry 1700. In other embodiments, a chip processor 2008 orother electronics may be included on the same semiconductor substrate asthe QDPCs and may be structured using a system-on-chip architecture. Theother electronics may include circuitry or software to provide digitalbinning in example embodiments. The chip 2000 also includes physicalstructures 2002 and other functional components 2004, which will also bedescribed in more detail below.

The QDPC 100 detects electromagnetic radiation 1000, which inembodiments may be any frequency of radiation from the electromagneticspectrum. Although the electromagnetic spectrum is continuous, it iscommon to refer to ranges of frequencies as bands within the entireelectromagnetic spectrum, such as the radio band, microwave band,infrared band (IR), visible band (VIS), ultraviolet band (UV), X-rays,gamma rays, and the like. The QDPC 100 may be capable of sensing anyfrequency within the entire electromagnetic spectrum; however,embodiments herein may reference certain bands or combinations of bandswithin the electromagnetic spectrum. It should be understood that theuse of these bands in discussion is not meant to limit the range offrequencies that the QDPC 100 may sense, and are only used as examples.Additionally, some bands have common usage sub-bands, such as nearinfrared (NIR) and far infrared (FIR), and the use of the broader bandterm, such as IR, is not meant to limit the QDPCs 100 sensitivity to anyband or sub-band. Additionally, in the following description, terms suchas “electromagnetic radiation”, “radiation”, “electromagnetic spectrum”,“spectrum”, “radiation spectrum”, and the like are used interchangeably,and the term color is used to depict a select band of radiation 1000that could be within any portion of the radiation 1000 spectrum, and isnot meant to be limited to any specific range of radiation 1000 such asin visible ‘color’.

In the example embodiment of FIG. 1, the nanocrystal materials andphotodetector structures described above may be used to provide quantumdot pixels 1800 for a photosensor array, image sensor or otheroptoelectronic device. In example embodiments, the pixels 1800 includequantum dot structures 1100 capable of receiving radiation 1000,photodetectors structures adapted to receive energy from the quantum dotstructures 1100 and pixel structures. The quantum dot pixels describedherein can be used to provide the following in some embodiments: highfill factor, color binning, potential to stack, potential to go to smallpixel sizes, high performance from larger pixel sizes, simplify colorfilter array, elimination of demosaicing, self-gain setting/automaticgain control, high dynamic range, global shutter capability,auto-exposure, local contrast, speed of readout, low noise readout atpixel level, ability to use larger process geometries (lower cost),ability to use generic fabrication processes, use digital fabricationprocesses to build analog circuits, adding other functions below thepixel such as memory, A to D, true correlated double sampling, binning,etc. Example embodiments may provide some or all of these features.However, some embodiments may not use these features.

A quantum dot 1200 may be a nanostructure, typically a semiconductornanostructure, that confines a conduction band electrons, valence bandholes, or excitons (bound pairs of conduction band electrons and valenceband holes) in all three spatial directions. A quantum dot exhibits inits absorption spectrum the effects of the discrete quantized energyspectrum of an idealized zero-dimensional system. The wave functionsthat correspond to this discrete energy spectrum are typicallysubstantially spatially localized within the quantum dot, but extendover many periods of the crystal lattice of the material.

FIG. 2 shows an example of a quantum dot 1200. In one exampleembodiment, the QD 1200 has a core 1220 of a semiconductor or compoundsemiconductor material, such as PbS. Ligands 1225 may be attached tosome or all of the outer surface or may be removed in some embodimentsas described further below. In some embodiments, the cores 1220 ofadjacent QDs may be fused together to form a continuous film ofnanocrystal material with nanoscale features. In other embodiments,cores may be connected to one another by linker molecules.

Some embodiments of the QD optical devices are single image sensor chipsthat have a plurality of pixels, each of which includes a QD layer thatis radiation 1000 sensitive, e.g., optically active, and at least twoelectrodes in electrical communication with the QD layer. The currentand/or voltage between the electrodes is related to the amount ofradiation 1000 received by the QD layer. Specifically, photons absorbedby the QD layer generate electron-hole pairs, such that, if anelectrical bias is applied, a current flows. By determining the currentand/or voltage for each pixel, the image across the chip can bereconstructed. The image sensor chips have a high sensitivity, which canbe beneficial in low-radiation-detecting 1000 applications; a widedynamic range allowing for excellent image detail; and a small pixelsize. The responsivity of the sensor chips to different opticalwavelengths is also tunable by changing the size of the QDs in thedevice, by taking advantage of the quantum size effects in QDs. Thepixels can be made as small as 1 square micron or less, or as large as30 by 30 microns or more or any range subsumed therein.

The photodetector structure 1400 is a device configured so that it canbe used to detect radiation 1000 in example embodiments. The detectormay be ‘tuned’ to detect prescribed wavelengths of radiation 1000through the types of quantum dot structures 1100 that are used in thephotodetector structure 1400. The photodetector structure can bedescribed as a quantum dot structure 1100 with an I/O for someinput/output ability imposed to access the quantum dot structures' 1100state. Once the state can be read, the state can be communicated topixel circuitry 1700 through an electrical interconnection 1404, whereinthe pixel circuitry may include electronics (e.g., passive and/oractive) to read the state. In an embodiment, the photodetector structure1400 may be a quantum dot structure 1100 (e.g., film) plus electricalcontact pads so the pads can be associated with electronics to read thestate of the associated quantum dot structure.

In embodiments, processing may include binning of pixels in order toreduce random noise associated with inherent properties of the quantumdot structure 1100 or with readout processes. Binning may involve thecombining of pixels 1800, such as creating 2×2, 3×3, 5×5, or the likesuperpixels. There may be a reduction of noise associated with combiningpixels 1800, or binning, because the random noise increases by thesquare root as area increases linearly, thus decreasing the noise orincreasing the effective sensitivity. With the QDPC's 100 potential forvery small pixels, binning may be utilized without the need to sacrificespatial resolution, that is, the pixels may be so small to begin withthat combining pixels doesn't decrease the required spatial resolutionof the system. Binning may also be effective in increasing the speedwith which the detector can be run, thus improving some feature of thesystem, such as focus or exposure. In example embodiments, binning maybe used to combine subpixel elements for the same color or range ofradiation (including UV and/or IR) to provide separate elements for asuperpixel while preserving color/UV/IR resolution as further describedbelow.

In embodiments the chip may have functional components that enablehigh-speed readout capabilities, which may facilitate the readout oflarge arrays, such as 5 Mpixels, 6 Mpixels, 8 Mpixels, 12 Mpixels, orthe like. Faster readout capabilities may require more complex, largertransistor-count circuitry under the pixel 1800 array, increased numberof layers, increased number of electrical interconnects, widerinterconnection traces, and the like.

In embodiments, it may be desirable to scale down the image sensor sizein order to lower total chip cost, which may be proportional to chiparea. However, shrinking chip size may mean, for a given number ofpixels, smaller pixels. In existing approaches, since radiation 1000must propagate through the interconnect layer onto the monolithicallyintegrated silicon photodiode lying beneath, there is a fill-factorcompromise, whereby part of the underlying silicon area is obscured byinterconnect; and, similarly, part of the silicon area is consumed bytransistors used in read-out. One workaround is micro-lenses, which addcost and lead to a dependence in photodiode illumination on positionwithin the chip (center vs. edges); another workaround is to go tosmaller process geometries, which is costly and particularly challengingwithin the image sensor process with its custom implants.

In embodiments, the technology discussed herein may provide a way aroundthese compromises. Pixel size, and thus chip size, may be scaled downwithout decreasing fill factor. Larger process geometries may be usedbecause transistor size, and interconnect line-width, may not obscurepixels since the photodetectors are on the top surface, residing abovethe interconnect. In the technology proposed herein, large geometriessuch as 0.13 um and 0.18 um may be employed without obscuring pixels.Similarly, small geometries such as 90 nm and below may also beemployed, and these may be standard, rather thanimage-sensor-customized, processes, leading to lower cost. The use ofsmall geometries may be more compatible with high-speed digital signalprocessing on the same chip. This may lead to faster, cheaper, and/orhigher-quality image sensor processing on chip. Also, the use of moreadvanced geometries for digital signal processing may contribute tolower power consumption for a given degree of image sensor processingfunctionality.

An example integrated circuit system that can be used in combinationwith the above photodetectors, pixel regions and pixel circuits will nowbe described in connection with FIG. 7. FIG. 7 is a block diagram of animage sensor integrated circuit (also referred to as an image sensorchip). The chip includes:

-   -   a pixel array (100) in which incident light is converted into        electronic signals, and in which electronic signals are        integrated into charge stores whose contents and voltage levels        are related to the integrated light incident over the frame        period; the pixel array may include color filters and electrode        structures for color film binning as described further below;    -   row and column circuits (110 & 120) which are used to reset each        pixel, and read the signal related to the contents of each        charge store, in order to convey the information related to the        integrated light over each pixel over the frame period to the        outer periphery of the chip; the pixel circuitry may include        circuitry for color binning as described further below;    -   analog circuits (130, 140, 150, 160, 230). The pixel electrical        signal from the column circuits is fed into the        analog-to-digital conver (160) where it is converted into a        digital number representing the light level at each pixel. The        pixel array and ADC are supported by analog circuits that        provide bias and reference levels (130, 140, & 150).    -   digital circuits (170, 180, 190, 200). The Image Enhancement        circuitry (170) provides image enhancement functions to the data        output from ADC to improve the signal to noise ratio. Line        buffer (180) temporarily stores several lines of the pixel        values to facilitate digital image processing and IO        functionality. (190) is a bank of registers that prescribe the        global operation of the system and/or the frame format. Block        200 controls the operation of the chip. The digital circuits may        also include circuits or software for digital color binning;    -   IO circuits (210 & 220) support both parallel input/output and        serial input/output. (210) is a parallel IO interface that        outputs every bit of a pixel value simultaneously. (220) is a        serial IO interface where every bit of a pixel value is output        sequentially.    -   a phase-locked loop (230) provides a clock to the whole chip.

In a particular example embodiment, when 0.11 um CMOS technology node isemployed, the periodic repeat distance of pixels along the row-axis andalong the column-axis may be 900 nm, 1.1 um, 1.2 um, 1.4 um, 1.75 um,2.2 um, or larger. The implementation of the smallest of these pixelssizes, especially 900 nm, 1.1 um, and 1.2 um, may require transistorsharing among pairs or larger group of adjacent pixels in someembodiments.

Very small pixels can be implemented in part because all of the siliconcircuit area associated with each pixel can be used for read-outelectronics since the optical sensing function is achieved separately,in another vertical level, by the optically-sensitive layer that residesabove the interconnect layer.

Because the optically sensitive layer and the read-out circuit thatreads a particular region of optically sensitive material exist onseparate planes in the integrated circuit, the shape (viewed from thetop) of (1) the pixel read-out circuit and (2) the optically sensitiveregion that is read by (1); can be generally different. For example itmay be desired to define an optically sensitive region corresponding toa pixel as a square; whereas the corresponding read-out circuit may bemost efficiently configured as a rectangle.

In an imaging array based on a top optically sensitive layer connectedthrough vias to the read-out circuit beneath, there exists no imperativefor the various layers of metal, vias, and interconnect dielectric to besubstantially or even partially optically transparent, although they maybe transparent in some embodiments. This contrasts with the case offront-side-illuminated CMOS image sensors in which a substantiallytransparent optical path must exist traversing the interconnect stack.In the case of conventional CMOS image sensors, this presents anadditional constraint in the routing of interconnect. This often reducesthe extent to which a transistor, or transistors, can practically beshared. For example, 4:1 sharing is often employed, but higher sharingratios are not. In contrast, a read-out circuit designed for use with atop-surface optically-sensitive layer can employ 8:1 and 16:1 sharing.

General Means of Making Such Chips, Including Combining Quantum Dotswith a Pre-Fabricated CMOS Wafer.

Some embodiments of QD devices include a QD layer and a custom-designedor pre-fabricated electronic read-out integrated circuit. The QD layeris then formed directly onto the custom-designed or pre-fabricatedelectronic read-out integrated circuit. In some embodiments, whereverthe QD layer overlies the circuit, it continuously overlaps and contactsat least some of the features of the circuit. In some embodiments, ifthe QD layer overlies three-dimensional features of the circuit, the QDlayer may conform to these features. In other words, there exists asubstantially contiguous interface between the QD layer and theunderlying electronic readout integrated circuit. One or more electrodesin the circuit contact the QD layer and are capable of relayinginformation about the QD layer, e.g., an electronic signal related tothe amount of radiation 1000 on the QD layer, to a readout circuit. TheQD layer can be provided in a continuous manner to cover the entireunderlying circuit, such as a readout circuit, or patterned. If the QDlayer is provided in a continuous manner, the fill factor can approachabout 100%, with patterning, the fill factor is reduced, but can stillbe much greater than a typical 35% for some example CMOS sensors thatuse silicon photodiodes.

In many embodiments, the QD optical devices are readily fabricated usingtechniques available in a facility normally used to make conventionalCMOS devices. For example, a layer of QDs can be solution-coated onto apre-fabricated electronic read-out circuit using, e.g., spin-coating,which is a standard CMOS process, and optionally further processed withother CMOS-compatible techniques to provide the final QD layer for usein the device. Because the QD layer need not require exotic or difficulttechniques to fabricate, but can instead be made using standard CMOSprocesses, the QD optical devices can be made in high volumes, and withno significant increase in capital cost (other than materials) overcurrent CMOS process steps.

The Layout of Top Metals, the Definition of Pixels, and the Reading ofCurrents from these Pixels Using Pixel Circuits.

FIG. 4 shows a two-row by three-column sub-region within a generallylarger array of top-surface electrodes. The array of electrical contactsprovides electrical communication to an overlying layer of opticallysensitive material. 1401 represents a common grid of electrodes used toprovide one shared contact to the optically sensitive layer. 1402represents the pixel-electrodes which provide the other contact forelectrical communication with the optically sensitive layer. Inembodiments, a voltage bias of −2 V may be applied to the common grid1401, and a voltage of +2.5 V may be applied at the beginning of eachintegration period to each pixel electrode 1402. Whereas the commoncontact 1401 is at a single electrical potential across the array at agiven time, the pixel electrodes 1402 may vary in time and space acrossthe array. For example if a circuit is configured such that the bias at1402 varies in relation to current flowing into or out of 1402, thendifferent electrodes 1402 may be at different biases throughout theprogress of the integration period. Region 1403 represents thenon-contacting region that lies between 1401 and 1402 within the lateralplane. 1403 is generally an insulating material in order to minimizedark current flowing between 1401 and 1402. 1401 and 1402 may generallyconsist of different materials. Each may for example be chosen forexample from the list: TiN; TiN/Al/TiN; Cu; TaN; Ni; Pt; and from thepreceding list there may reside superimposed on one or both contacts afurther layer or set of layers chosen from: Pt, alkanethiols, Pd, Ru,Au, ITO, or other conductive or partially conductive materials.

In example embodiments using the above structures, interconnect 1452 mayform an electrode in electrical communication with a capacitance,impurity region on the semiconductor substrate or other charge store. Insome embodiments, a voltage is applied to the charge store anddischarges due to the flow of current across the optically sensitivefilm over an integration period of time. At the end of the integrationperiod of time, the remaining voltage is sampled to generate a signalcorresponding to the intensity of light absorbed by the opticallysensitive layer during the integration period. In other embodiments, thepixel region may be biased to cause a voltage to accumulate in a chargestore over an integration period of time. At the end of the integrationperiod of time, the voltage may be sampled to generate a signalcorresponding to the intensity of light absorbed by the opticallysensitive layer during the integration period. In some exampleembodiments, the bias across the optically sensitive layer may vary overthe integration period of time due to the discharge or accumulation ofvoltage at the charge store. This, in turn, may cause the rate ofcurrent flow across the optically sensitive material to also vary overthe integration period of time. In addition, the optically sensitivematerial may be a nanocrystal material with photoconductive gain and therate of current flow may have a non-linear relationship with theintensity of light absorbed by the optically sensitive layer. As aresult, in some embodiments, circuitry may be used to convert thesignals from the pixel regions into digital pixel data that has a linearrelationship with the intensity of light absorbed by the pixel regionover the integration period of time. The non-linear properties of theoptically sensitive material can be used to provide a high dynamicrange, while circuitry can be used to linearize the signals after theyare read in order to provide digital pixel data. Example pixel circuitsfor read out of signals from pixel regions are described further below.

FIG. 3a represents closed—simple patterns 1430 (e.g., conceptualillustration) and 1432 (e.g., vias used to create photodetectorstructures). In the closed-simple illustrations 1430-1432 the positivelybiased electrical interconnect 1452 is provided in the center area of agrounded contained square electrical interconnect 1450. Squareelectrical interconnect 1450 may be grounded or may be at anotherreference potential to provide a bias across the optically sensitivematerial in the pixel region. For example, inteconnect 1452 may bebiased with a positive voltage and interconnect may be biased with anegative voltage to provide a desired voltage drop across a nanocrytalmaterial in the pixel region between the electrodes. In thisconfiguration, when radiation 1000 to which the layer is responsivefalls within the square area a charge is developed and the charge isattracted to and move towards the center positively biased electricalinterconnect 1452. If these closed-simple patterns are replicated overan area of the layer, each closed simple pattern forms a portion or awhole pixel where they capture charge associated with incident radiation1000 that falls on the internal square area. In example embodiments, theelectrical interconnect 1450 may be part of a grid that forms a commonelectrode for an array of pixel regions. Each side of the interconnect1450 may be shared with the adjacent pixel region to form part of theelectrical interconnect around the adjacent pixel. In this embodiment,the voltage on this electrode may be the same for all of the pixelregions (or for sets of adjacent pixel regions) whereas the voltage onthe interconnect 1452 varies over an integration period of time based onthe light intensity absorbed by the optically sensitive material in thepixel region and can be read out to generate a pixel signal for eachpixel region. In example embodiments, interconnect 1450 may form aboundary around the electrical interconnect 1452 for each pixel region.The common electrode may be formed on the same layer as interconnect1452 and be positioned laterally around the interconnect 1450. In someembodiments, the grid may be formed above or below the layer ofoptically sensitive material in the pixel region, but the bias on theelectrode may still provide a boundary condition around the pixel regionto reduce cross over with adjacent pixel regions.

FIG. 3b illustrates open simple patterns of electrical interconnects.The open simple patterns do not, generally, form a closed pattern. Theopen simple pattern does not enclose a charge that is produced as theresult of incident radiation 1000 with the area between the positivelybiased electrical interconnect 1452 and the ground 1450; however, chargedeveloped within the area between the two electrical interconnects willbe attracted and move to the positively biased electrical interconnect1452. An array including separated open simple structures may provide acharge isolation system that may be used to identify a position ofincident radiation 1000 and therefore corresponding pixel assignment. Asabove, electrical interconnect 1450 may be grounded or be at some otherreference potential. In some embodiments, electrical interconnect 1450may be electrically connected with the corresponding electrode of otherpixels (for example, through underlying layers of interconnect) so thevoltage may be applied across the pixel array. In other embodiments, theinterconnect 1450 may extend linearly across multiple pixel regions toform a common electrode across a row or column.

Pixel circuitry that may be used to read out signals from the pixelregions will now be described. As described above, in embodiments, pixelstructures 1500 within the QDPC 100 of FIG. 1 may have pixel layouts1600, where pixel layouts 1600 may have a plurality of layoutconfigurations such as vertical, planar, diagonal, or the like. Pixelstructures 1500 may also have embedded pixel circuitry 1700. Pixelstructures may also be associated with the electrical interconnections1404 between the photodetector structures 1400 and pixel circuitry 1700.

In embodiments, quantum dot pixels 1800 within the QDPC 100 of FIG. 1may have pixel circuitry 1700 that may be embedded or specific to anindividual quantum dot pixel 1800, a group of quantum dot pixels 1800,all quantum dot pixels 1800 in an array of pixels, or the like.Different quantum dot pixels 1800 within the array of quantum dot pixels1800 may have different pixel circuitry 1700, or may have no individualpixel circuitry 1700 at all. In embodiments, the pixel circuitry 1700may provide a plurality of circuitry, such as for biasing, voltagebiasing, current biasing, charge transfer, amplifier, reset, sample andhold, address logic, decoder logic, memory, TRAM cells, flash memorycells, gain, analog summing, analog-to-digital conversion, resistancebridges, or the like. In embodiments, the pixel circuitry 1700 may havea plurality of functions, such as for readout, sampling, correlateddouble sampling, sub-frame sampling, timing, integration, summing, gaincontrol, automatic gain control, off-set adjustment, calibration, offsetadjustment, memory storage, frame buffering, dark current subtraction,binning, or the like. In embodiments, the pixel circuitry 1700 may haveelectrical connections to other circuitry within the QDPC 100, such aswherein other circuitry located in at least one of a second quantum dotpixel 1800, column circuitry, row circuitry, circuitry within thefunctional components 2004 of the QDPC 100, or other features 2204within the integrated system 2200 of the QDPC 100, or the like. Thedesign flexibility associated with pixel circuitry 1700 may provide fora wide range of product improvements and technological innovations.

Pixel circuitry 1700 within the quantum dot pixel 1800 may take aplurality of forms, ranging from no circuitry at all, justinterconnecting electrodes, to circuitry that provides functions such asbiasing, resetting, buffering, sampling, binning, conversion,addressing, memory, and the like. In embodiments, electronics tocondition or process the electrical signal may be located and configuredin a plurality of ways. For instance, amplification of the signal may beperformed at each pixel, group of pixels, at the end of each column orrow, after the signal has been transferred off the array, just prior towhen the signal is to be transferred off the chip 2000, or the like. Inanother instance, analog-to-digital conversion may be provided at eachpixel, group of pixels, at the end of each column or row, within thechip's 2000 functional components 2004, after the signal has beentransferred off the chip 2000, or the like. In addition, processing atany level may be performed in steps, where a portion of the processingis performed in one location and a second portion of the processing isperformed in another location. An example may be the performinganalog-to-digital conversion in two steps, say with an analog combiningat the pixel 1800 and a higher-rate analog-to-digital conversion as apart of the chip's 2000 functional components 2004.

In embodiments, different electronic configurations may requiredifferent levels of post-processing, such as to compensate for the factthat every pixel has its own calibration level associated with eachpixel's readout circuit. The QDPC 100 may be able to provide the readoutcircuitry at each pixel with calibration, gain-control, memoryfunctions, and the like. Because of the QDPC's 100 highly integratedstructure, circuitry at the quantum dot pixel 1800 and chip 2000 levelmay be available, which may enable the QDPC 100 to be an entire imagesensor system on a chip. In some embodiments, the QDPC 100 may also becomprised of a quantum dot material 200 in combination with conventionalsemiconductor technologies, such as CCD and CMOS.

Pixel circuitry may be defined to include components beginning at theelectrodes in contact with the quantum dot material 200 and ending whensignals or information is transferred from the pixel to other processingfacilities, such as the functional components 2004 of the underlyingchip 200 or another quantum dot pixel 1800. Beginning at the electrodeson the quantum dot material 200, the signal is translated or read. Inembodiments, the quantum dot material 200 may provide a change incurrent flow in response to radiation 1000. The quantum dot pixel 1800may require bias circuitry 1700 in order to produce a readable signal.This signal in turn may then be amplified and selected for readout. Oneembodiment of a pixel circuit shown in FIG. 6a uses a reset-biastransistor 1802, amplifier transistor 1804, and column addresstransistor 1808. This three-transistor circuit configuration may also bereferred to as a 3T circuit. Here, the reset-bias transistor 1802connects the bias voltage 1702 to the photoconductive photovoltaicquantum dot material 200 when reset 1704 is asserted, thus resetting theelectrical state of the quantum dot material 200. After reset 1704, thequantum dot material 200 may be exposed to radiation 1000, resulting ina change in the electrical state of the quantum dot material 200, inthis instance a change in voltage leading into the gate of the amplifier1804. This voltage is then boosted by the amplifier transistor 1804 andpresented to the address selection transistor 1808, which then appearsat the column output of the address selection transistor 1808 whenselected. In some embodiments, additional circuitry may be added to thepixel circuit to help subtract out dark signal contributions. In otherembodiments, adjustments for dark signal can be made after the signal isread out of the pixel circuit. In example, embodiments, additionalcircuitry may be added for film binning or circuit binning as describedin connection with FIGS. 9 A-D below.

Although additional circuitry may not be required for the low noiseoperation of the QDPC 100 in some embodiments, a fourth transistorcircuit group may be added to increase sensitivity. FIG. 6b shows a QDPC100 4T circuit, with the fourth transistor 1708 configured as a sampleand hold. This configuration may also be referred to as a globalshutter, where the entire pixel 1800 array may be sampled at the sametime, but not necessarily at a fixed time, where the time of samplingmay be a function of radiation 1000 conditions. The sample and hold mayimplement a correlated double sampling, where the signal value of eachpixel is transferred to the output, and the output is reset to areference value. The final value assigned to this pixel may be thedifference between the reference value and the transferred signal.Correlated double sampling may yield the best representation of the truevalue associated with each pixel. From an electronics standpoint, theremay be different methods for accomplishing this, such as digital, analogsample and hold, integration, dual slope, and the like. Differences ineffectiveness may become evident with ultra low noise systems of lessthan 4 or 5 electrons, depending on the overall design of the system. Inan embodiment, two sample and holds may be used, holding two values inorder to utilize the difference between them. In addition, the QDPC 4Tcircuit may also have a separate pixel reset, which may be distinct fromthe circuit reset. The two resets may be used simultaneously, or atdifferent times. In embodiments, the QDPC 100 circuits may have variedvoltages, time profiles, lengths of reset times, sampling schemes, andthe like, that my enable innovative product solutions not capable withconventional designs. In example, embodiments, additional circuitry maybe added for film binning or circuit binning as described in connectionwith FIGS. 9 A-D below (except that the 4T structure similar to FIG. 6bwould be used instead of the 3T structure shown in FIG. 9 D).

In embodiments, the biasing of the photodetector may be time invariantor time varying. Varying space and time may reduce cross-talk, andenable a shrinking the quantum dot pixel 1800 to a smaller dimension,and require connections between quantum dot pixels 1800. Biasing couldbe implemented by grounding at the corner of a pixel 1800 and dots inthe middle. Biasing may occur only when performing a read, enablingeither no field on adjacent pixels 1800, forcing the same bias onadjacent pixels 1800, reading odd columns first then the even columns,and the like. Electrodes and/or biasing may also be shared betweenpixels 1800. Biasing may be implemented as a voltage source or as acurrent source. Voltage may be applied across a number of pixels, butthen sensed individually, or applied as a single large bias across astring of pixels 1800 on a diagonal. The current source may drive acurrent down a row, then read it off across the column. This mayincrease the level of current involved, which may decrease read noiselevels.

In embodiments, configuration of the field, by using a biasing scheme orconfiguration of voltage bias, may produce isolation between pixels.Currently may flow in each pixel so that only electron-hole pairsgenerated in that volume of pixel flow within that pixel. This may allowelectrostatically implemented inter-pixel isolation and cross-talkreduction, without physical separation. This could break the linkagebetween physical isolation and cross-talk reduction.

In embodiments, the pixel circuitry 1700 may include circuitry for pixelreadout. Pixel readout may involve circuitry that reads the signal fromthe quantum dot material 200 and transfers the signal to othercomponents 1900, chip functional components 2004, to the other features2204 of the integrated system 2200, or to other off chip components.Pixel readout circuitry may include quantum dot material 200 interfacecircuitry, such as the 3T and 4T circuits shown in FIGS. 6a and 6b forexample and circuitry for color binning, such as the circuitry shown inFIGS. 9 A-C below. Pixel readout may involve different ways to readoutthe pixel signal, ways to transform the pixel signal, voltages applied,and the like. Pixel readout may require a number of metal contacts withthe quantum dot material 200, such as 2, 3, 4, 20, or the like. Theseelectrical contacts may be custom configured for size, degree ofbarrier, capacitance, and the like, and may involve other electricalcomponents such a Schottky contact. Pixel readout time may be related tohow long the radiation 1000-induced electron-hole pair lasts, such asfor milliseconds or microseconds. In embodiments, this time my beassociated with quantum dot material 200 process steps, such as changingthe persistence, gain, dynamic range, noise efficiency, and the like.

The quantum dot pixels 1800 described herein can be arranged in a widevariety of pixel layouts 1600. Referring to FIGS. 5a-p for example, aconventional pixel layout 1600, such as the Bayer filter layout 1602,includes groupings of pixels disposed in a plane, which different pixelsare sensitive to radiation 1000 of different colors. In conventionalimage sensors, such as those used in most consumer digital cameras,pixels are rendered sensitive to different colors of radiation 1000 bythe use of color filters that are disposed on top of an underlyingphotodetector, so that the photodetector generates a signal in responseto radiation 1000 of a particular range of frequencies, or color. Inthis configuration, mosaic of different color pixels is referred tooften as a color filter array, or color filter mosaic. Althoughdifferent patterns can be used, the most typical pattern is the Bayerfilter pattern 1602 shown in FIG. 5a , where two green pixels, one redpixel and one blue pixel are used, with the green pixels (often referredto as the luminance-sensitive elements) positioned on one diagonal of asquare and the red and blue pixels (often referred to as thechrominance-sensitive elements) are positioned on the other diagonal.The use of a second green pixel is used to mimic the human eye'ssensitivity to green light. Since the raw output of a sensor array inthe Bayer pattern consists of a pattern of signals, each of whichcorresponds to only one color of light, demosaicing algorithms are usedto interpolate red, green and blue values for each point. Differentalgorithms result in varying quality of the end images. Algorithms maybe applied by computing elements on a camera or by separate imageprocessing systems located outside the camera. Quantum dot pixels may belaid out in a traditional color filter system pattern such as the BayerRGB pattern; however, other patterns may also be used that are bettersuited to transmitting a greater amount of light, such as Cyan, Magenta,Yellow (CMY). Red, Green, Blue (RGB) color filter systems are generallyknown to absorb more light than a CMY system. More advanced systems suchas RGB Cyan or RGB Clear can also be used in conjuction with Quantum dotpixels.

In one embodiment, the quantum dot pixels 1800 described herein areconfigured in a mosaic that imitates the Bayer pattern 1602; however,rather than using a color filter, the quantum dot pixels 1800 can beconfigured to respond to radiation 1000 of a selected color or group ofcolors, without the use of color filters. Thus, a Bayer pattern 1602under an embodiment includes a set of green-sensitive, red-sensitive andblue-sensitive quantum dot pixels 1800. Because, in embodiments, nofilter is used to filter out different colors of radiation 1000, theamount of radiation 1000 seen by each pixel is much higher.

Color Filters and Pixel Patterns for Binning.

FIGS. 8 A-C illustrate color pixel patterns, binning sites and binnedpatterns that may be used in example embodiments. The first column ofFIGS. 8 A-C shows color subpixel patterns that can be used in exampleembodiments. The first column shows the pixel pattern in high resolutionmode. In this mode, a bias electrode separates each color subpixel. Thebias electrode may be provided by a grid electrode or multiple gridelectrodes that provide a common bias for the subpixel elements. Asecond pixel electrode inside each subpixel region may be used tocollect a signal from each subpixel region that can be read by pixelcircuitry. The pixel circuitry may be formed on an integrated circuitdevice under the photosensitive material. In example embodiments, thecolor patterns shown in the first column of FIGS. 8 A-C are formed oncolor filters that are placed over the photosensitive material. Forexample, pixel circuitry may be formed on a CMOS integrated circuitdevice. Metal contacts from the CMOS circuitry may be connected to theelectrodes and a layer of photosensitive material may be formed over theelectrodes. A color filter with the desired color pattern shown in thefirst column of FIGS. 8 A-C may be positioned over the photosensitivematerial. In this example, the photosensitive material may be acontinuous film of interconnected nanocrystals. The photosensitivematerial may be sensitive to each of the colors of light to be detected,but the color filter only allows the desired color of light to reacheach subpixel region of the photosensitive material. In alternativeembodiments, subpixels may also be provided for other wavebands such asUV and/or IR subpixels or Y, U, V color subpixels instead of or inaddition to R, G, B subpixels as shown in FIGS. 8 A-C.

In other embodiments, different photosensitive material sensitive to therespective waveband may be used for each subpixel area and a colorfilter may not be needed in some embodiments. For example, in someembodiments, vertical layers of photosensitive material may be used. Inaddition, other embodiments may use different colors or color patterns.For example, Cyan, Yellow and Magenta color subpixels or combinations ofRed, Green, Blue and Cyan, Yellow and Magenta may be used. In addition,other embodiments may use different electrode patterns, such as lateralelectrodes, interdigitated electrodes, vertically stacked electrodes orother electrode patterns as described above.

As shown in the first column of FIG. 8A for array 8010, the colorsubpixel regions on the color filter may be arranged so that each pixelin high resolution mode has a red, blue and two green subpixels similarto a Bayer pattern. However, the position of the subpixels for adjacentpixels are arranged so that multiple subpixels for the same color areadjacent to one another. For example, three red, green or blue subpixelsfrom adjacent pixels may be combined in an “L” shape, as shown by thecircled set of three green subpixels at 8005 in the upper right cornerof array 8010. The binned subpixels include two adjacent subpixels fromone row and a subpixel from an adjacent row that is in the same columnas one of those two subpixels. It will be apparent that FIGS. 8 A-C onlyshow a portion of the whole pixel array and the pattern would continuefor other pixels. For example, an array may include 2, 4, 6, 8 or moremegapixels.

For binning in array 8010, some of the electrode segments in theelectrode grid are switched off. They are disconnected from the biasused in the high resolution mode. The remaining electrode segments form“L” shaped patterns as shown at 8011 that remain connected to the bias.Each “L” shaped region corresponds to three color subpixels for the samecolor that are binned together from three adjacent pixels (such as thethree green subpixels shown at 8005). One or more pixel electrodeswithin these regions may be used to read a signal from the binned areainto the pixel circuit. For example, one or more of the pixel electrodesused to read signals from each subpixel in full resolution mode (whichmay be, for example, a square electrode in each subpixel region that isconnected by a via to the pixel circuit) may be used to read the signalfor the binned “L” shaped region. The third column of FIG. 8A shows thebinned pixel pattern at 8012. This pattern is similar to a Bayer patternwith each color component of the binned super pixel corresponding to oneof the “L” shaped regions formed by the active electrode segments. Asdescribed in the fourth column of FIG. 8A, this pattern provides 3-to-1binning, with a binning factor in the X (horizontal) direction of 2 anda binning factor in the Y (vertical) direction of 1.5.

Array 8020 in the second row of FIG. 8A shows another color filterpattern that can be used for binning. The pixels are arranged so columnsof four adjacent subpixels of the same color are formed. For binning,some of the electrode segments are disconnected, so the active electrodesegments form the pattern shown at 8021. This results in super pixelswith elongated color elements that alternate red, green, blue, green asshown at 8022. Each color element is a vertical stripe that is onesubpixel wide and four subpixels high. As described in the fourth columnof FIG. 8A, this pattern provides a binning factor in the X (horizontal)direction of 1 and a binning factor in the Y (vertical) direction of 4.

Array 8030 in the third row of FIG. 8A shows another color filterpattern that can be used for binning. The pixels are arranged so fourgreen subpixels are adjacent to one another (two adjacent greensubpixels in one row aligned in the same columns as two green subpixelsin an adjacent row). Each pixel may use two green subpixels, one redsubpixel and one blue subpixel similar to a Bayer pattern, but thesubpixels are arranged so four adjacent subpixel regions for green arenext to each other as shown at 8030. In addition, two red subpixels andtwo blue subpixels from adjacent pixels are positioned next to oneanother. For binning, some of the electrode segments are disconnected,so the active electrode segments form the pattern shown at 8031. Thisresults in super pixels as shown at 8032 with four green subpixelsbinned together to provide the green color element of the super pixel,two red subpixels binned together to provide the red color element forthe super pixel and two blue subpixels binned together to provide theblue color element for the super pixel. As described in the fourthcolumn of FIG. 80A, this pattern provides a binning factor in the X(horizontal) direction of 2 and a binning factor in the Y (vertical)direction of 2 for green, 1 for red and 1 for blue.

Array 8040 in the first row of FIG. 8B shows another color filterpattern that can be used for binning. Each pixel may use two greensubpixels, one red subpixel and one blue subpixel similar to a Bayerpattern, but the subpixels are arranged so four subpixels from fouradjacent pixel regions are next to each other for each color as shown at8040. For binning, some of the electrode segments are disconnected, sothe active electrode segments form the pattern shown at 8041. As shownat 8041, this results in regions that are the size of a 2×2 block ofsubpixels. This results in super pixels with color elements in a Bayerpattern (with two green color elements, one red color element and oneblue color element) as shown at 8042. Each color element corresponds tothe area of four subpixels. As described in the fourth column of FIG.8B, this pattern provides 4-to-1 binning, with a binning factor in the X(horizontal) direction of 2 and a binning factor in the Y (vertical)direction of 2.

Array 8050 in the second row of FIG. 8B shows another color filterpattern that can be used for binning. The pixels are arranged in apattern similar to a Bayer pattern with each pixel having two greensubpixels, one red subpixel and one blue subpixel, but the subpixels arearranged so subpixels from adjacent pixel regions are diagonally aligned(see, for example, circled regions in array 8050), For binning, some ofthe electrode segments are disconnected, so the active electrodesegments form the pattern shown at 8051. As shown at 8051, this resultsin diagonally striped regions that correspond to a set of fourdiagonally aligned subpixels. In this example embodiment, the electrodesfor full resolution may have slightly slanted, oval or other irregularlyshaped electrodes or electrode segments so that electrode segments canbe selected for binning that approximate the regions shown at 8051. Thisresults in super pixels with color elements corresponding to fourdiagonal subpixel regions as shown at 8052. As described in the fourthcolumn of FIG. 8B, this pattern provides a binning factor in the X(horizontal) direction of 4 and a binning factor in the Y (vertical)direction of 1.

Array 8060 in the third row of FIG. 8B shows another color filterpattern that can be used for binning. The pixels are arranged in apattern similar to a Bayer pattern with each pixel having two greensubpixels, one red subpixel and one blue subpixel, but the subpixels arearranged so subpixels from adjacent pixel regions are diagonally aligned(see, for example, the circled regions in array 8060). For binning, someof the electrode segments are disconnected, so the active electrodesegments form the pattern shown at 8061. As shown at 8061, this resultsin diagonally striped regions that correspond to a set of fourdiagonally aligned subpixels. In this example embodiment, the electrodesfor full resolution may have slightly slanted, oval or other irregularlyshaped electrodes or electrode segments so that electrode segments canbe selected for binning that approximate the regions shown at 8061. Thisis similar to the patterns used for array 8050, but the pixels arebinned into super pixels differently. Instead of using the binneddiagonal regions to represent horizontally elongated color elements, thebinned regions are used to represent vertically elongated color elementsfor each super pixel as shown at 8062. As described in the fourth columnof FIG. 8B, this pattern provides a binning factor in the X (horizontal)direction of 1 and a binning factor in the Y (vertical) direction of 4.

Array 8070 in the first row of FIG. 8C shows another color filterpattern that can be used for binning. The pixels are arranged so columnsof subpixels of the same color are formed. For binning, some of theelectrode segments are disconnected, so the active electrode segmentsform the pattern shown at 8021. This results in super pixels withelongated color elements that alternate red, green, blue, green as shownat 8022. Each color element is a vertical stripe that is one subpixelwide and four subpixels high. As described in the fourth column of FIG.8C, this pattern provides a binning factor in the X (horizontal)direction of 1 and a binning factor in the Y (vertical) direction of 4.

Array 8080 in the second row of FIG. 8C shows another color filterpattern that can be used for binning. The pixels are arranged so fourgreen subpixels are adjacent to one another (two adjacent greensubpixels in one row aligned in the same columns as two green subpixelsin an adjacent row). Each pixel may use two green subpixels, one redsubpixel and one blue subpixel similar to a Bayer pattern, but thesubpixels are arranged so four adjacent subpixel regions for green arenext to each other as shown at 8030. In this example, the red and bluesubpixels alternate and are not binned in the film. They can be binnedtogether using circuit binning or digital binning to combine two redsubpixels and two blue subpixels for the color elements of thesuperpixel or they can be maintained as separate subpixel signals. Forbinning, some of the electrode segments are disconnected, so the activeelectrode segments form the pattern shown at 8081. This results in superpixels as shown at 8082 with four green subpixels binned together toprovide the green color element of the super pixel. The red and bluesubpixels remain separated. As described in the fourth column of FIG.8C, this pattern provides a binning factor in the X (horizontal)direction of 2 for green, 1 for red and 1 for blue and a binning factorin the Y (vertical) direction of 2 for green, 1 for red and 1 for blue.

Array 8090 in the third row of FIG. 8C shows another color filterpattern that can be used for binning. The pixels are arranged so fourgreen subpixels are adjacent to one another and red and blue pixels arealigned diagonally. The four green subpixels are binned and groups ofdiagonal red and blue subpixels can be binned as well. For binning, someof the electrode segments are disconnected to provide for binning thesegroups of subpixels. This results in super pixels as shown at 8092 withfour subpixels binned together for each color element. As described inthe fourth column of FIG. 8C, this pattern provides a binning factor inthe X (horizontal) direction of 2 for green, 4 for red and 4 for blueand a binning factor in the Y (vertical) direction of 2 for green, 1 forred and 1 for blue.

FIGS. 9A-D illustrate pixel circuitry for high resolution, film binningand circuit binning modes in example embodiments. The pixel circuit maybe formed on an integrated circuit device under the photosensitivematerial in example embodiments. The parts of circuits 9 A, B and C arenumbered 1, 2, 3 and 4 as well as with reference numbers for particularcircuit elements. Part 1 of each circuit is generally for chargecollection, part 2 is generally for pixel readout (charge to voltageconversion), part 3 is generally for column storage and part 4 is forcolumn readout. The orange circles (parts 1, 2, 3 and 4 in FIG. 9A; part1 in FIG. 9B and parts 1 and 2 in FIG. 9C) are separate operations thatoccur for each subpixel. The green circles (parts 2, 3 and 4 in FIG. 9Band parts 3 and 4 in FIG. 9C) are grouped operations that apply tobinned signals. The black arrow in each of FIGS. 9A-C represents theread out path for the signal. The read out path is connected to a pixelread out circuit, such as the 3T or 4T circuits described above. Anexample of a 3T circuit that may be used is shown in FIG. 9D. Thecircuit in FIG. 9D operates similarly to the circuit in FIG. 6a , exceptthat a binned signal may be provided to the node shown with an orangecircle in FIG. 9D for binning modes.

As shown at 9000, high resolution mode may use a read out for eachsmallest patterned subpixel region. As shown at part 1 of circuit 9000,charge flows across the optically sensitive material for a subpixelregion 9014 during the integration period. In high resolution mode, thegrid electrodes are biased for full resolution mode as shown in one ofthe configurations in the first column of FIGS. 8 A-C. The pixelelectrode 9016 collects charge from within the subpixel region duringthe integration period. This electrode may be connected to the pixelcircuitry through the metal interconnect and via of the integratedcircuit device on which the pixel circuitry is formed. The transistor9018 shown at part 2 of circuit 9010 is turned on in full resolutionmode. This transistor 9018 provides a switch that can be selectivelyturned off for some of the subpixels during binning. As shown at part 3of circuit 9000, a charge store 9022 is used for integrating a signalfrom the subpixel element. This charge store 9022 may be provided byparasitic capacitance of a transistor or may be a separate capacitiveelement. As shown by the arrows 9020 in part 4 of circuit 9000, thesignal may be read out of the circuit after the integration period. Inan example embodiment, the capacitance for the charge store for eachsubpixel element may be the same.

The circuit at 9100 in FIG. 9B illustrates the pixel circuitry in filmbinning mode. In film binning mode, the grid electrodes are biased asshown in one of the configurations in the second column of FIGS. 8 A-C,with portions of the electrode segments disconnected to allow forbinning. In this example, four subpixel regions are integrated to asingle common charge store. The four pixel electrodes may correspond tothe pixel electrodes used to read out four adjacent subpixels of thesame color during full resolution mode in one of the configurationsshown in FIGS. 8A-C. For example, for array 8040 in FIG. 8B, there maybe a pixel electrode for each of the red subpixels circled at 8045 inFIG. 8B. As shown in the second column of FIG. 8B at 8041, this regionis binned into a single red color element for a super pixel. The fourpixel electrodes used to read out the four circled red subpixels may nowbe used to read out the signal from the binned red color element shownat 8045 in FIG. 8B. As shown in the circuit at 9100 in FIG. 9B, thesignal from these four pixel electrodes may be read out to one of thecharge stores 9022 during binning. For example, as shown in circuit9100, the switches 9018 in part 2 of the circuit may be opened for threeout of the four charge stores 9022 that were used to read subpixels infull resolution mode. In an example embodiment, the charge store usedfor binning may correspond to one of the charge stores 9022 used to readout an individual sub-pixel in full resolution mode. In an exampleembodiment, the same capacitance may be used for this charge store. Anadditional capacitive element does not need to be added for binning. Byintegrating a signal from a larger area of the photosensitive materialto a charge store with the same capacitance, higher sensitivity can beobtained. If a higher capacitance is used for the charge store forbinning, the conversion gain/capacitance drops thereby reducingsensitivity. However, a higher capacitance charge store may be used forbinning in some embodiments to provide higher dynamic range (since morecharge can be integrated with a higher capacitance).

The circuit at 9200 in FIG. 9C illustrates a pixel circuit that may beused for circuit binning. In this circuit, the switches 9218 in part 2of the circuit may be used to select between integration to a commoncharge store 9221 or integration to individual charge stores 9220. Inthis example, the four subpixels being combined may be from foursubpixels of the same color from different pixels, even if the subpixelsare not adjacent to one another. The lines of the pixel circuit may berouted under the optically sensitive material to connect the desiredsubpixels for circuit binning. For example, these signals may be routedin the metals layers of a CMOS integrated circuit device and may passunder adjacent subpixels of a different color in order to combinesignals from a remotely positioned subpixel of the same color. For highresolution mode, this circuit may be used by turning on one of theswitches 9218 at a time and reading each subpixel from line 9222separately in a serial fashion. For circuit binning, all four switches9218 are turned on and the binned signal from all four subpixels is readout at the same time.

In some embodiments, the capacitance for the charge store or multiplecharge stores used for binning may be greater than the capacitance usedin film binning mode and/or full resolution mode. For example, thecommon charge store in circuit 9221 may have a larger capacitance thanthe individual charge stores used for each subpixel element in fullresolution mode. As a result, a mode with higher dynamic range can beprovided by using circuit or film binning with a larger capacitance forthe charge store during binning.

These are examples only and other circuits may be used for fullresolution, film binning and circuit binning in other embodiments.

Some embodiments may combine multiple modes of binning in a singe imagesensor. For example, circuit 9000 may be used in full resolution modewhere each subpixel is read out separately. Circuit 9200 may also beused for a high resolution mode where individual subpixels are read outserially as described above. A second mode may be provided with filmbinning by switching the pixel circuitry to operate as shown at 9100.This provides a higher sensitivity mode that can be used for low lightconditions. A third mode may be provided that uses the circuit as shownat 9000 or 9200, but with a switch selected that combines the read outlines for four subpixels of the same color. This provides binning with ahigher capacitance for the charge store and can be used to provide amode with higher dynamic range. This mode could use either film binningor circuit binning. In yet another mode, circuit binning may be used tocombine super pixel color elements that are read out by circuitsoperating in the film binning mode shown at 9100. Any of the abovebinning modes may also be used for a video mode, where the decrease inresolution may be acceptable and provide lower storage requirements. Inaddition, if the smallest patterned subpixel is very small (for example,less than about 2×2 microns, or less than 1.5×1.5 microns or less than1×1 microns), the loss in resolution may not be significantly perceivedby a person viewing the resulting image or video relative to fullresolution mode. Any combination of these modes may be combined in asingle image sensor array for use in a camera on a cell phone forexample.

FIG. 10 illustrates interleaved electrode grids that may be used for4-to-1 binning in an example embodiment. As shown in FIG. 10, one grid1010 may form a boundary around 4×4 subpixel element blocks. Theseblocks may correspond to the regions to be binned in the array shown at8041 in FIG. 8B. A second set of “+” or cross-shaped electrodes 1020 mayseparate these blocks into four separate subpixel regions in fullresolution mode. A switch (shown as “Film Binning Enable”) may be usedto selectively disconnect the second set of electrodes for binning. Thismay be coordinated with the switches in the pixel circuit shown in FIGS.9A and B to provide binning of 4×4 regions into a common charge store(as shown at 9200 in FIG. 9B). The individual square dots 1030 in themiddle of each subpixel region in FIG. 10 show the pixel electrodes usedto read the signal from the individual subpixels. In film binning mode,all four pixel electrodes for the 4×4 binned region are connected to acommon charge store as shown at 9200 in FIG. 9B.

FIG. 11 shows another example embodiment of electrode grids and a pixelcircuit for film binning. The pixel circuitry shown in FIG. 11corresponds to the portion of the pixel circuit shown in FIG. 9D, butthe electrodes are connected to the bias differently. As shown in FIG.11, the outer grid 1110 enclosing the binned region may be connected toa bias grid electrode voltage. The second set of “+” or cross-shapedgrids at 1120 may be connected to the same bias in full resolution modeto separate the subpixel regions. In this mode, switch 1140 is on andnode 1142 is connected to the bias grid electrode voltage. In filmbinning mode, the pixel electrodes may be disconnected and the “+”shaped grids at 1120 may be used as pixel electrodes for the binnedregion. The “+” shaped pixel electrodes collect charge to acapacitance/charge store at node 1142. Switch 1140 if off, so node 1142is isolated from the bias grid electrode voltage and can be used forreading the binned signal instead. This allow a larger symmetric pixelelectrode to be used in binning mode instead of one or more of the fourseparate pixel electrodes used in full resolution mode.

FIG. 12A illustrates an electrode layout for 4-to-1 binning according toan example embodiment. As shown in FIG. 12A, an outer electrode grid isconnected to Vbias2 and an inner electrode grid structure is connectedto Vbias1. A switch may be used to connect these two electrodes to acommon bias during full resolution mode. The switch may be opened todisconnect the inner “+” shaped electrode structure during binning. Thepixel electrodes are connected to the pixel circuit by vias. In oneexample, this circuit has 1.1 micron square subpixels and provides4-to-1 binning. For a 2 megapixel array, the size is about 2090 micronshorizontally and 1430 microns vertically. Another example circuit has1.4 micron square subpixels and provides 4-to-1 binning. Thisarrangement may be used to provide a 2 megapixel array for an imagesensor array having a size of about 2660 microns horizontally and 1820microns vertically. Arrays with 4, 8 or more 1.1 micron square or 1.4micron square megapixels may be provided with proportional changes inthe size of the array in example embodiments.

FIG. 12B illustrates an example electrode layout for 3-to-1 binningsimilar to the arrangement shown at 8010 in FIG. 8A. As shown in FIG.12B, an outer electrode grid is connected to Vbias2 and an innerelectrode grid structure is connected to Vbias1. A switch may be used toconnect these two electrodes to a common bias or ground during fullresolution mode. The switch may be opened to disconnect the innerelectrode structure during binning. This leaves only the outer grid(connected to Vbias2 active) and provides “L” shaped binning regionswhere three subpixels of the same color are binned together (similar tothe pattern shown at 8011 in FIG. 8A). The pixel electrodes areconnected to the pixel circuit by vias. Example embodiments may use 1.1micron square or 1.4 micron square pixels and have 2, 4, 8 or moremegapixel arrays with sizes as described in connection with FIG. 12Aabove.

Other embodiments may be used to provide film binning as well. Forexample, vertical layers of optically sensitive material may be used toprovide a vertical pixel arrangement as shown above in FIGS. 5d and 5e .Each vertical stack has layers sensitive to different colors or rangesof radiation. The stacks may be separated by vertical grid electrodesthat separate one pixel from an adjacent pixel for reading individualpixel regions of each layer in full resolution mode. Pixel electrodesfor each subpixel may read a signal from each layer in the stack for adifferent color or range of radiation. Film binning may be provided bydisconnecting segments of the vertical grid separating these stacks, sothe layers from adjacent pixels are no longer separated. The pixelelectrodes for each layer can then read a signal from a larger area ofthe optically sensitive material corresponding to subpixels of the samecolor wavebands (or UV or IR wavebands) from adjacent subpixels.

While example embodiments of the present invention have been shown anddescribed herein, it will be obvious to those skilled in the art thatsuch embodiments are provided by way of example only. Numerousvariations, changes, and substitutions will now occur to those skilledin the art without departing from the invention. It should be understoodthat various alternatives to the embodiments of the invention describedherein may be employed in practicing the invention. It is intended thatthe following claims define the scope of the invention and that methodsand structures within the scope of these claims and their equivalents becovered thereby.

What is claimed is:
 1. An image sensor, comprising: a semiconductorsubstrate; an array of pixel regions, each pixel region comprising anoptically sensitive layer over the substrate, the plurality of pixelregions comprising first pixel regions, having multiple subpixel regionsfor separate wavebands within a visible spectral range, and second pixelregions for an infrared spectral range; pixel circuits respectivelycoupled to the pixel regions, each pixel circuit comprising a readoutcircuit and at least one charge store, wherein the pixel circuitscoupled to the at least the first pixel regions comprise multiple,respective charge stores for the multiple subpixel regions; andcircuitry operative in a first mode to cause the pixel circuits to readout charges from the subpixel regions in each of the first pixel regionsinto the respective charge stores within each of the first pixelregions, and operative in a second mode to bin together charges from aplurality of the subpixel regions for the same waveband from a group ofthe first pixel regions to a shared charge store, while the charges fromthe second pixel regions are read out to the respective charge storeswithout binning.
 2. The image sensor according to claim 1, wherein thesubpixel regions of each of the first pixel regions comprise threesubpixel regions, which are sensitive to red, green, and blue light,respectively.
 3. The image sensor according to claim 1, wherein thesecond pixel regions are not divided into subpixel regions.
 4. The imagesensor according to claim 1, wherein the first pixel regions in thegroup from which the charges are binned together from the plurality ofthe subpixel regions are mutually adjacent.